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GAL22V10D-25LP ÃÖ¼ÒÁÖ¹®¼ö·® : 10°³ |
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Á¦Á¶È¸»ç : Lattice |
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Features • HIGH PERFORMANCE E2CMOS¢ç TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.5 ns Maximum from Clock Input to Data Output — UltraMOS¢ç Advanced CMOS Technology • ACTIVE PULL-UPS ON ALL PINS • COMPATIBLE WITH STANDARD 22V10 DEVICES — Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices • 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR — 90mA Typical Icc on Low Power Device — 45mA Typical Icc on Quarter Power Device • E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention • TEN OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs • PRELOAD AND POWER-ON RESET OF REGISTERS — 100% Functional Testability • APPLICATIONS INCLUDE: — DMA Control — State Machine Control — High Speed Graphics Processing — Standard Logic Speed Upgrade • ELECTRONIC SIGNATURE FOR IDENTIFICATION
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