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AT49BV162AT ÃÖ¼ÒÁÖ¹®¼ö·® : 5°³ |
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16-megabit(1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout • Fast Word Program Time – 12 ¥ìs • Fast Sector Erase Time – 300 ms • Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word • Low-power Operation – 12 mA Active – 13 ¥ìA Standby • Data Polling, Toggle Bit, Ready/Busy for End of Program Detection • VPP Pin for Write Protection • RESET Input for Device Initialization • Sector Lockdown Support • TSOP and CBGA Package Options • Top or Bottom Boot Block Configuration Available • 128-bit Protection Register • Minimum 100,000 Erase Cycles • Common Flash Interface (CFI)
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