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IC > ¸Þ¸ð¸® > FLASH > AT49BV162AT
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AT49BV162AT
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16-megabit(1M x 16/2M x 8)
3-volt Only Flash Memory

Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Access Time – 70 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 12 ¥ìs
• Fast Sector Erase Time – 300 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
• Low-power Operation
– 12 mA Active
– 13 ¥ìA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)


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