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| 제조회사 : EON |
| 판매가격 : 2,400원 |
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| 적립금액 : 0원 |
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| ★★★★★ |
| 신속하고 정확한 배송을 약속드립니다 |
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EN29F002 / EN29F002N
2 Megabit (256K x 8-bit) Flash Memory
FEATURES
· 5.0V ± 10% for both read/write operation
· Read Access Time
- 45ns, 55ns, 70ns, and 90ns
· Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
· Sector Architecture:
One 16K byte Boot Sector, Two 8K byte
Parameter Sectors, one 32K byte and
three 64K byte main Sectors
· Boot Block Top/Bottom Programming
Architecture
· High performance program/erase speed
- Byte program time: 10μs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
· Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
· Low Power Active Current
- 30mA active read current
- 30mA program / erase current
· JEDEC Standard program and erase
commands
· JEDEC standard DATA polling and toggle
bits feature
· Hardware RESET Pin (n/a for EN29F002N)
· Single Sector and Chip Erase
· Sector Protection / Temporary Sector
Unprotect (RESET = VID)
· Sector Unprotect Mode
· Embedded Erase and Program Algorithms
· Erase Suspend / Resume modes:
Read and program another sector during
Erase Suspend Mode
· 0.4 μm double-metal double-poly
triple-well CMOS Flash Technology
· Low Vcc write inhibit < 3.2V
· 100K endurance cycle
· Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
· Commercial and Industrial Temperature
Ranges
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