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AT49LV8192A-90TC ÃÖ¼ÒÁÖ¹®¼ö·® : 10°³ |
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8-Megabit(512K x 16) CMOS Flash Memory
Features • Low Voltage Operation – 2.7V Read – 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks – One 488K Words (976K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Word-By-Word Programming - 30 ms/Word • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 mA CMOS Standby Current • Typical 10,000 Write Cycles
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