1-megabit(128K x 8)
5-volt Only Flash Memory
Features
• Single-voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time – 45 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (32K Bytes, 64K Bytes)
• Fast Erase Cycle Time – 3 Seconds
• Byte-by-Byte Programming – 30 μs/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 20 mA Active Current
– 50 μA CMOS Standby Current
• Typical 10,000 Write Cycles
데이터시트 보기
* 본 제품은 경우에 따라 호환되는 타사 제품으로 변경될 수 있음을 알려 드립니다.
주문시 참고 하세요~~ |
