|
W29EE011P-90
최소주문수량 : 20개 |
|
|
| 제조회사 : WINBOND |
| 판매가격 : 1,500원 |
|
|
|
| 적립금액 : 0원 |
|
|
|
|
|
| ★★★★★ |
| 신속하고 정확한 배송을 약속드립니다 |
|
|
|
|
|
128K ´ 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
· Single 5-volt program and erase operations
· Fast page-write operations
- 128 bytes per page
- Page program cycle: 10 mS (max.)
- Effective byte-program cycle time: 39 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Read access time: 90/150 nS
· Page program/erase cycles: 1K/10K
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
· Automatic program timing with internal VPP
generation
· End of program detection
- Toggle bit
- Data polling
· Latched address and data
· TTL compatible I/O
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
데이터시트 보기
* 본 제품은 경우에 따라 호환되는 타사 제품으로 변경될 수 있음을 알려 드립니다.
주문시 참고 하세요~~ |
* 제품 사용 전 반드시 테스트 후 사용하시기 바랍니다.
* 첨부된 데이터시트는 참고용으로만 사용하시기 바랍니다. |
 |
|
