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 IC
> 메모리
> RAM
> HY57V641620HGT-H
최소주문수량 : 5개
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HY57V641620HGT-H
최소주문수량 : 5개 |
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| 제조회사 : HYNIX |
| 판매가격 : 6,800원 |
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| 적립금액 : 0원 |
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| ★★★★★ |
| 신속하고 정확한 배송을 약속드립니다 |
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DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.
HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized
with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
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