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IC
> ¸Þ¸ð¸®
> RAM
> K4S641632H-UC75 ÃÖ¼ÒÁÖ¹®¼ö·® : 10°³
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K4S641632H-UC75 ÃÖ¼ÒÁÖ¹®¼ö·® : 10°³ |
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Á¦Á¶È¸»ç : SAMSUNG |
ÆǸŰ¡°Ý : 3,400¿ø |
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Àû¸³±Ý¾× : 0¿ø |
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4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle) • Pb-free Package • RoHS compliant
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