Untitled Document
 
Untitled Document
 
ºñ¹Ð¹øÈ£ È®ÀÎ ´Ý±â
 
IC > Linear IC > OP-AMP(DIP) > LF356N (DIP)
ÃÖ¼ÒÁÖ¹®¼ö·® : 50°³
LF356N (DIP)
ÃÖ¼ÒÁÖ¹®¼ö·® : 50°³
Á¦Á¶È¸»ç : ANY
ÆǸŰ¡°Ý : 540¿ø
Àû¸³±Ý¾× : 0¿ø
¼ö·®  : °³
¡Ú¡Ú¡Ú¡Ú¡Ú
½Å¼ÓÇÏ°í Á¤È®ÇÑ ¹è¼ÛÀ» ¾à¼Óµå¸³´Ï´Ù
  
 

General Description
These are the first monolithic JFET input operational amplifiers
to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FET¢â Technology).
These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.

Features
Advantages
n Replace expensive hybrid and module FET op amps
n Rugged JFETs allow blow-out free handling compared
with MOSFET input devices
n Excellent for low noise applications using either high or
low source impedance—very low 1/f corner
n Offset adjust does not degrade drift or common-mode
rejection as in most monolithic amplifiers
n New output stage allows use of large capacitive loads
(5,000 pF) without stability problems
n Internal compensation and large differential input voltage
capability


µ¥ÀÌÅͽÃÆ® º¸±â


* º» Á¦Ç°Àº °æ¿ì¿¡ µû¶ó ȣȯµÇ´Â Å¸»ç Á¦Ç°À¸·Î º¯°æµÉ ¼ö ÀÖÀ½À» ¾Ë·Á µå¸³´Ï´Ù.

  ÁÖ¹®½Ã Âü°í Çϼ¼¿ä~~

* Á¦Ç° »ç¿ë Àü ¹Ýµå½Ã Å×½ºÆ® ÈÄ »ç¿ëÇϽñ⠹ٶø´Ï´Ù.
* Ã·ºÎµÈ µ¥ÀÌÅͽÃÆ®´Â Âü°í¿ëÀ¸·Î¸¸ »ç¿ëÇϽñ⠹ٶø´Ï´Ù.

   
À̸§ :
³»¿ë :
ÆòÁ¡
 
 
 
 
¹øÈ£ Á¦¸ñ ÀÛ¼ºÀÚ ÀÛ¼ºÀÏ Á¶È¸
 
 

Untitled Document